PEO-604 Semiconductor Furnace

ATV’s PEO-604 is a 230mm diameter quartz tube, where the process tube, thermal insulation and heaters are enclosed within an N2 purged and interlocked enclosure, to enable processing of hazardous and flammable materials. In addition to standard oxidation, annealing, diffusion processes etc., the system is capable of processing pyrophoric or highly flammable gases, precursor materials or even toxic gases.

System can process wafers up to 200mm in diameter, with a flat zone within the furnace for up to 50 wafers (temperature uniformity +/- 1.5°C, over 150mm batch). Furnace body is hermetically sealed providing < 1 ppm Oxygen contact with 2 x vacuum N2 back fill routines. Windows based process recipe generation and management system: 100steps per recipe, Step length 1s – 99:59min, process data logging, several user levels, Barcode management and a PLC Controller.

Designed for volume production through wall installation is possible while still retaining easy to access service hatches for preventative and routine maintenance. The PEO 604 has low energy and gas consumption with zero energy loss at Ambient Standby.

The systems are high quality, reliable production tools capable of continuous operation and rapid switching between a variety of complex processes without contamination using the novel “in-liner” principle.

PEO-604 in-liner principle for wet/dry thermal oxidation and annealing with gas inlet through door bell jar ball joint into In Liner – by this method, a clean atmosphere is maintained inside it, scarifying the original process tube

• Run multiple processes in the same furnace
• Prevents cross contamination across different processes
• Prevents deposition outside in-liner
• In-liners are replaceable without leak-check
• Flexible with wafer boats
• Easy to replace

Thermal oxidation of silicon #1

• Wet oxidation using H2O bubbler for various applications e.g. MEMS
• Thick oxides e.g. 3 μm SiO2 (30h at 1100°C)
• Automatic water refill setup

Thermal oxidation of silicon #2

• High quality oxides for e.g. Gate applications
• Sophisticated external torch system for safely ultra-pure steam generation
• Sematech approved for introduction of DCE through the injector
• Use of DCE at lower temperatures

Low Temperature Oxide

• Diethylsilane (SiH2(C2H5)2 with O2
• LPCVD at 350-450°C
• Interlevel dielectric, over metal passivation glass
• Silane with O2
• Use of diluted silane possible (2% SiH4 in N2)
• 400 – 450 °C, 100 – 300 Pa

TEOS Oxide

• Tetraethyl Orthosilicate (Si(C2H5O)4
• LPCVD at 650-750°C, up to 20 nm/min deposition rate
• Trench fill, inter-level dielectric
• Direct vapour draw delivery
• Advanced vaporizer system

High Temperature Oxide

• SiH4 or SiH2Cl2 with N2O
• LPCVD at 800-900°C, 50 – 150 Pa
• Use of diluted silane possible (e.g. 2% SiH4 in N2)